High-rate magnetron deposition of CuOx films in the metallic mode enhanced by radiofrequency inductively coupled plasma source / D. V. Sidelev, E. D. Voronina, V. A. Grudinin

Set Level: VacuumMain Author: Sidelev, D. V., physicist, engineer of Tomsk Polytechnic University, 1991-, Dmitry VladimirovichCoauthor: Voronina, E. D., specialist in the field of nuclear technologies, engineer of Tomsk Polytechnic University, 2000-, Ekaterina Dmitrievna;Grudinin, V. A., physicist, engineer of Tomsk Polytechnic University, 1995-, Vladislav AlekseevichCorporate Author (Secondary): Национальный исследовательский Томский политехнический университет, Инженерная школа ядерных технологий, Научно-образовательный центр Б. П. ВейнбергаLanguage: английский.Country: Sweden.Abstract: The article describes the high-rate deposition of CuOx films by magnetron sputtering system operated in the metallic mode and enhanced by radiofrequency inductively coupled plasma (RF-ICP) source. The role of the RF-ICP assistance on modes of Cu target sputtering in Ar + O2 atmosphere was investigated by determination of hysteresis loops and using optical emission spectroscopy. Then, the CuOx films were deposited on the unmoved substrates depending on their position in the vacuum chamber. The deposition conditions to obtain the CuOx films with some phase and elemental composition were determined. The comparison of the deposition rates of the CuO films is done for the deposition by magnetron sputtering in the metallic mode and using conventional reactive sputtering..Bibliography: [References: 30 tit.].Audience: .Subject: электронный ресурс | труды учёных ТПУ | magnetron sputtering | high-rate deposition | copper oxide | thin films | radiofrequency inductively coupled plasma (RF-ICP) source Online Resources:Click here to access online
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[References: 30 tit.]

The article describes the high-rate deposition of CuOx films by magnetron sputtering system operated in the metallic mode and enhanced by radiofrequency inductively coupled plasma (RF-ICP) source. The role of the RF-ICP assistance on modes of Cu target sputtering in Ar + O2 atmosphere was investigated by determination of hysteresis loops and using optical emission spectroscopy. Then, the CuOx films were deposited on the unmoved substrates depending on their position in the vacuum chamber. The deposition conditions to obtain the CuOx films with some phase and elemental composition were determined. The comparison of the deposition rates of the CuO films is done for the deposition by magnetron sputtering in the metallic mode and using conventional reactive sputtering.

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